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MRF9085LR3 - RF POWER MOSFETs

Features

  • tor, Inc f = 865 MHz VDD = 26 V, IDQ = 700 mA, Pout = 90 W PEP f MHz 865 880 895 Zsource Ω 1.35 - j1.92 1.33 - j1.66 1.28 - j1.30 Zload Ω 1.26 - j0.15 1.26 - j0.10 1.21 - j0.20 Zsource = Test circuit impedance as measured from gate to ground. Zload Note: = Test circuit impedance as m.

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Datasheet Details

Part number MRF9085LR3
Manufacturer Motorola
File Size 527.11 KB
Description RF POWER MOSFETs
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9085/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with www.datasheet4u.com frequencies from 865 to 895 MHz. The high gain and broadband performance N - Channel Enhancement - Mode Lateral MOSFETs of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 700 mA IS - 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 20 Watts Power Gain — 17.9 dB Efficiency — 28% Adjacent Channel Power — 750 kHz: - 45.0 dBc @ 30 kHz BW 1.98 MHz: - 60.
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