MRF949T1 Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF949T1/D The RF Line NPN Silicon Low Noise Transistors Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small signal amplifiers. The MRF949 is well suited for low voltage wireless applications.
MRF949T1 Key Features
- Low Noise Figure, NFmin = 1.4 dB (Typ) @ 1 GHz @ 5 mA
- High Current Gain-Bandwidth Product, ft = 9 GHz @ 15 mA
- Maximum Stable Gain = 18 dB @ 1 GHz @ 5 mA
- Output Third Order Intercept, OIP3 = +29 dBm @ 1 GHz @ 10 mA
- Fully Ion-Implanted with Gold Metallization and Nitride Passivation
- Available in Tape and Reel Packaging Options: T1 Suffix = 3,000 Units per Reel
- Continuous (2) Maximum Junction Temperature Storage Temperature Thermal Resistance, Junction to Case Symbol VCEO VCBO VE
- 55 to +150 520 Unit Vdc Vdc Vdc Watts mW/°C mA °C °C °C/W
- Continuous (MTBF > 10 years)
- 0.1 0.1 Vdc Vdc µA µA