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MRF959T1 - LOW NOISE TRANSISTORS

Key Features

  • a 9 GHz DC current gain.
  • bandwidth product with excellent linearity.
  • Low Noise Figure, NFmin = 1.3 dB (Typ) @ 1 GHz @ 5 mA.
  • High Current Gain.
  • Bandwidth Product, ft = 9 GHz @ 30 mA.
  • Maximum Available Gain, MAG = 17 dB (Typ) @ 1 GHz @ 15 mA.
  • Output Third Order Intercept, OIP3 = +30 dBm @ 1 GHz @ 30 mA.
  • Fully Ion.
  • Implanted with Gold Metallization and Nitride Passivation.
  • Available in Tape and Reel Packaging Options: T1 Su.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF959T1/D The RF Line NPN Silicon Low Noise Transistors Motorola’s MRF959 is a high performance silicon NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF959 is well suited for low voltage applications. This device features a 9 GHz DC current gain–bandwidth product with excellent linearity. • Low Noise Figure, NFmin = 1.