MRFG35003M6T1
MRFG35003M6T1 is RF Power Field Effect Transistor manufactured by Motorola Semiconductor.
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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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The RF GaAs Line
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in Class AB Customer Premise Equipment (CPE) applications.
- Typical W- CDMA Performance:
- 42 dBc ACPR, 3.55 GHz, 6 Volts, IDQ = 180 mA Output Power
- 450 mWatts Power Gain
- 9 dB Efficiency
- 24%
- 3 Watts P1dB @ 3.55 GHz
- Excellent Phase Linearity and Group Delay Characteristics
- High Gain, High Efficiency and High Linearity
- In Tape and Reel. T1...
