| Part number | MRFG35003M6T1 |
|---|---|
| Datasheet | MRFG35003M6T1_Motorola.pdf |
| File Size | 356.60 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | RF Power Field Effect Transistor |
|
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MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MRFG35003M6T1/D The RF GaAs Line Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz.
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MRFG35003MT1 | RF Power Field Effect Transistor |
| MRFG35010MT1 | RF Power Field Effect Transistor |
| MRF10005 | MICROWAVE POWER TRANSISTOR |
| MRF1002 | MICROWAVE POWER TRANSISTOR |
| MRF10031 | MICROWAVE POWER TRANSISTOR |
| MRF10070 | MICROWAVE POWER TRANSISTOR |
| MRF10120 | MICROWAVE POWER TRANSISTORS |
| MRF10150 | MICROWAVE POWER TRANSISTORS |
| MRF1015Mx | MICROWAVE POWER TRANSISTORS |
| MRF1030 | UHF POWER TRANSISTOR |
