Datasheet4U Logo Datasheet4U.com

MRFIC1859 - Dual Band / GSM 3.6V Integrated Power Amplifier

Description

Pin No.

1 Symbol B23G I/O I Description GSM Bias for 2nd and 3rd stage Functionality Bias pin of GSM second and third stages.

Biasing circuit is made of an internal resistor connected to RF transistor gate, and in series with a current source, connected to VSS (Pin 32).

Features

  • (continued) Pin No. 22,23 24 25,26,27, 28,29 30 31 32 Symbol D2D B23D OutD I/O I I O.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MRFIC1830 Low Noise Amplifier Motorola Semiconductor
MRFIC1505 Integrated GPS Downconverter Freescale Semiconductor
MRFIC1505A Integrated GPS Downconverter Freescale Semiconductor
MRF Fast Acting Radial Lead Micro Fuse Series Bel Fuse
MRF-261 High Band VHF FM Power Transistor Eleflow

Other Datasheets by

Part Number Description
MRFIC1854A CDMA Upmixer / Exciter
MRFIC1856 Dual Band / Dual Mode pHEMT GaAs IPA
MRFIC1801 1.8GHz TRANSMIT/RECEIVE ANTENNA SWITCH
MRFIC1803 1.8GHz Upconverter
MRFIC1804 1.8GHz LNA/Downmixer

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Order this document by MRFIC1859/D Dual-Band/GSM 3.6 V Integrated Power Amplifier The MRFIC1859 is a dual–band, single supply RF Power Amplifier for GSM900/DCS1800 hand held radios. The on–chip spur free voltage generator reduces the number of external components by eliminating the need for a negative voltage supply. The device output power can be controlled open loop without the use of directional coupler and detection diode. The MRFIC1859 is General Packet Radio Service (GPRS) compatible. The device is packaged in a TQFP–32EP with exposed backside pad allowing excellent electrical and thermal performance through a solderable contact. MRFIC1859 DUAL–BAND GSM 3.
Published: |