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MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRW3001/D
Microwave Power Transistors
. . . designed primarily for large–signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers • Specified 28 Volt, 3.0 GHz Characteristics: Output Power — 1.0 to 5.0 Watts Power Gain — 5.0 to 7.0 dB Min Collector Efficiency — 30% Min • Gold Metallization for Improved Reliability • Diffused Ballast Resistors • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
MRW3001 MRW3003 MRW3005
5.0 – 7.0 dB 1.5 – 3.0 GHz 1.0 – 5.
MRW3005 Datasheet
