MSB1218A-ST1
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MSB1218A- RT1/D
PNP Silicon General Purpose Amplifier Transistor
This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC- 70/SOT- 323 package which is designed for low power surface mount applications.
- High h FE, 210
- 460
- Low VCE(sat), < 0.5 V
- Available in 8 mm, 7- inch/3000 Unit Tape and Reel
COLLECTOR 3
MSB1218A-RT1 MSB1218A-ST1
Motorola Preferred Devices
PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
1 BASE
2 EMITTER
MAXIMUM RATINGS (TA = 25°C)
Rating Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current
- Continuous Collector Current
- Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Value 45 45 7.0 100 200 Unit Vdc Vdc Vdc m Adc m Adc
CASE 419- 02, STYLE 3 SC- 70/SOT- 323
DEVICE MARKING
MSB1218A- RT1 = BR MSB1218A- ST1 = BS
THERMAL CHARACTERISTICS
Rating Power Dissipation(1) Junction...
