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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MSB710–QT1/D
PNP General Purpose Amplifier Transistors Surface Mount
COLLECTOR 3
MAXIMUM RATINGS (TA = 25°C) Rating
Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature
DEVICE MARKING
Marking Symbol
CQX
2 BASE
1 EMITTER
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
IC IC(P)
Symbol PD TJ Tstg
CRX
MSB710–QT1
MSB710–RT1
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
MSB710-QT1 MSB710-RT1*
*Motorola Preferred Device
2 1
3
CASE 318D–03, STYLE 1 SC–59
Value – 60 – 50 – 7.
MSB710-QT1 Datasheet
