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MSC2295-CT1 - NPN RF Amplifier Transistors

Download the MSC2295-CT1 datasheet PDF. This datasheet also covers the MSC2295-BT1 variant, as both devices belong to the same npn rf amplifier transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

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📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MSC2295-BT1_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MSC2295-CT1 NPN RF Amplifier Transistors LRC
MSC2295-CT1 NPN RF Amplifier Transistors ETL
MSC2295-CT1 NPN RF Amplifier Transistors ON Semiconductor
MSC2295-BT1 NPN RF Amplifier Transistors LRC
MSC2295-BT1 NPN RF Amplifier Transistors ETL

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MSC2295-BT1 NPN RF Amplifier Transistors
MSC3130T1 NPN RF Amplifier Transistors Surface Mount
MSC8101 Network Digital Signal Processor
MSC8102ADS User Manual

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MSC2295–BT1/D NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS (TA = 25°C) Rating Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 30 20 5.0 30 Unit Vdc Vdc Vdc mAdc CASE 318D–03, STYLE 1 SC–59 THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 www.DataSheet4U.com Unit mW °C °C – 55 ~ +150 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Collector–Base Cutoff Current (VCB = 10 Vdc, IE = 0) DC Current Gain(1) (VCB = 10 Vdc, IC = –1.