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MSC3130T1 - NPN RF Amplifier Transistors Surface Mount

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MSC3130T1/D NPN RF Amplifier Transistor Surface Mount MSC3130T1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER Unit Vdc Vdc Vdc mAdc CASE 318D–03, STYLE 1 SC–59 MAXIMUM RATINGS (TA = 25°C) Rating Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCBO VCEO VEBO IC Value 15 10 3.0 50 THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 – 55 ~ +150 Unit mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Collector Cutoff Current (VCB = 10 Vdc, IE = 0) Collector–Emitter Breakdown Voltage (IC = 2.