MSC3130T1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MSC3130T1/D
NPN RF Amplifier Transistor Surface Mount
Motorola Preferred Device
COLLECTOR 3
3 2 1
2 BASE
1 EMITTER Unit Vdc Vdc Vdc m Adc CASE 318D- 03, STYLE 1 SC- 59
MAXIMUM RATINGS (TA = 25°C)
Rating Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current
- Continuous Symbol VCBO VCEO VEBO IC Value 15 10 3.0 50
THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150
- 55 ~ +150 Unit m W °C °C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Collector Cutoff Current (VCB = 10 Vdc, IE = 0) Collector- Emitter Breakdown Voltage (IC = 2.0 m Adc, IB = 0) Emitter- Base Breakdown Voltage (IE = 10 µAdc, IC = 0) DC Current Gain(1) (VCE = 4.0 Vdc, IC = 5.0 m Adc) Collector- Emitter Saturation Voltage (IC = 20 m Adc, IB = 4.0 m Adc) Current- Gain
- Bandwidth Product (VCB = 4.0 Vdc, IE =
- 5.0 m Adc) 1. Pulse Test: Pulse...
