The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MSD6100/D
Dual Switching Diode Common Cathode
MSD6100
Anode 1
2 Anode
1 2 3
3 Cathode
CASE 29–04, STYLE 3 TO–92 (TO–226AA)
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current (Pulse Width = 10 µsec) Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VR IF IFM(surge) PD(1) TJ, Tstg(1) Value 100 200 500 625 5.0 – 55 to +135 Unit Vdc mAdc mAdc mW mW/°C °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Breakdown Voltage (I(BR) = 100 µAdc) Reverse Current (VR = 100 Vdc) (VR = 50 Vdc) (VR = 50 Vdc, TA = 125°C) Forward Voltage (IF = 1.