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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MSD6150/D
Dual Diode Common Anode
MSD6150
3 Anode
1 2 3
CASE 29–04, STYLE 4 TO–92 (TO–226AA) Cathode 1 2 Cathode
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Peak Forward Recurrent Current Peak Forward Surge Current (Pulse Width = 10 µsec) Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VR IF IFM(surge) PD(1) TJ, Tstg(1) Value 70 200 500 625 5.0 – 55 to +135 Unit Vdc mAdc mAdc mW mW/°C °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Breakdown Voltage (I(BR) = 100 µAdc) Reverse Current (VR = 50 Vdc) Forward Voltage (IF = 10 mAdc) Capacitance (VR = 0) Reverse Recovery Time (IF = IR = 10 mAdc, VR = 5.
MSD6150 Datasheet
