Datasheet Details
| Part number | MTB30N06VL |
|---|---|
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| File Size | 262.44 KB |
| Description | TMOS POWER FET |
| Datasheet | MTB30N06VL_Motorola.pdf |
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Overview: MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB30N06VL/D TMOS Power Field Effect Transistor D2PAK for Surface Mount TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and mutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
| Part number | MTB30N06VL |
|---|---|
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| File Size | 262.44 KB |
| Description | TMOS POWER FET |
| Datasheet | MTB30N06VL_Motorola.pdf |
|
|
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MTB30N06VL | Power MOSFET | ON Semiconductor |
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MTB30N06EL | TMOS Power FET | Motorola Semiconductor |
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MTB30N06ELT4 | TMOS Power FET | Motorola Semiconductor |
| Part Number | Description |
|---|---|
| MTB30P06V | TMOS POWER FET |
| MTB33N10E | TMOS POWER FET |
| MTB36N06E | TMOS POWER FET |
| MTB36N06V | TMOS POWER FET |
| MTB3N100E | TMOS POWER FET |
| MTB3N120E | TMOS POWER FET |
| MTB3N60E | TMOS POWER FET |
| MTB10N40E | TMOS POWER FET |
| MTB1306 | TMOS POWER FET |
| MTB15N06E | TMOS POWER FET |