MTB3N100E datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MTB3N100E |
|---|---|
| Datasheet | MTB3N100E_Motorola.pdf |
| File Size | 262.24 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET |
|
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N100E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB3N100E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount...
View MTB3N100E datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MTB3N100E | High Energy Power FET | ON Semiconductor |
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
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| MTB36N06E | TMOS POWER FET |
| MTB36N06V | TMOS POWER FET |
| MTB10N40E | TMOS POWER FET |
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