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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Advance Information
TMOS E-FET.™ Power Field Effect Transistors D2PAK for Surface Mount Logic Level TMOS (L2TMOSāā™ā) N–Channel Enhancement–Mode Silicon Gate
These TMOS Power FETs are designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. This Logic Level Series part is specified to operate with level logic gate–to–source voltage of 5 volt and 4 volt. • Silicon Gate for Fast Switching Speeds • Low RDS(on) — 0.
MTB50N06EL Datasheet
