MTB55N06Z
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Advance Information
TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount
N- Channel Enhancement- Mode Silicon Gate
This advanced high voltage TMOS E- FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain- to- source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
- Avalanche Energy Capability Specified at Elevated Temperature
- Source- to- Drain Diode Recovery Time parable to a Discrete Fast Recovery Diode
- Low Stored Gate Charge for Efficient Switching
- Internal Source- to- Drain Diode Designed to Replace External Zener Transient...
