MTB55N06Z Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB55N06Z/D Advance Information TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain to source diode with fast recovery time. Designed for high...