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MTB9N25E Datasheet Tmos Power Fet

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

Overview: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB9N25E/D ™ Data Sheet TMOS E-FET.

Key Features

  • the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, s.

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