Datasheet Details
| Part number | MTD15N06VL |
|---|---|
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| File Size | 177.19 KB |
| Description | TMOS POWER FET |
| Datasheet | MTD15N06VL_Motorola.pdf |
|
|
Overview: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD15N06VL/D ™ TMOS V ™ Designer's Data Sheet MTD15N06VL Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
| Part number | MTD15N06VL |
|---|---|
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| File Size | 177.19 KB |
| Description | TMOS POWER FET |
| Datasheet | MTD15N06VL_Motorola.pdf |
|
|
|
Compare MTD15N06VL distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MTD15N06V | Power MOSFET | ON Semiconductor |
| Part Number | Description |
|---|---|
| MTD15N06V | TMOS POWER FET |
| MTD10N05E | TMOS4 POWER FET |
| MTD12N06EZL | High Energy Power FET DPAK |
| MTD1302 | TMOS POWER FET |
| MTD1N40 | POWER FIELD EFFECT TRANSISTOR |
| MTD1N50E | TMOS POWER FET |
| MTD1N60E | TMOS POWER FET |
| MTD1N80E | TMOS POWER FET |
| MTD1P50E | TMOS POWER FET |
| MTD20N03HDL | TMOS POWER FET |