| Part number | MTD1N60E |
|---|---|
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| File Size | 215.36 KB |
| Description | TMOS POWER FET |
| Datasheet | MTD1N60E_Motorola.pdf |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD1N60E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition this advanced TMOS E FET is designed to withstand high energy in...
| Part Number | Description |
|---|---|
| MTD1N40 | POWER FIELD EFFECT TRANSISTOR |
| MTD1N50E | TMOS POWER FET |
| MTD1N80E | TMOS POWER FET |
| MTD10N05E | TMOS4 POWER FET |
| MTD12N06EZL | High Energy Power FET DPAK |
| MTD1302 | TMOS POWER FET |
| MTD15N06V | TMOS POWER FET |
| MTD15N06VL | TMOS POWER FET |
| MTD1P50E | TMOS POWER FET |
| MTD20N03HDL | TMOS POWER FET |
