MTD1P50E Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD1P50E/D Product Preview TMOS E-FET .™ High Energy Power FET P Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain to source diode with fast recovery time. Designed for high voltage, high speed...