| Part number | MTD1P50E |
|---|---|
| Datasheet | MTD1P50E_Motorola.pdf |
| File Size | 97.38 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD1P50E/D Product Preview TMOS E-FET .™ High Energy Power FET P Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain to source diode with fast recovery time. Designed for high voltage, high speed...
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTD10N05E | TMOS4 POWER FET |
| MTD12N06EZL | High Energy Power FET DPAK |
| MTD1302 | TMOS POWER FET |
| MTD15N06V | TMOS POWER FET |
| MTD15N06VL | TMOS POWER FET |
| MTD1N40 | POWER FIELD EFFECT TRANSISTOR |
| MTD1N50E | TMOS POWER FET |
| MTD1N60E | TMOS POWER FET |
| MTD1N80E | TMOS POWER FET |
| MTD20N03HDL | TMOS POWER FET |
