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MTD2N40E Datasheet

Tmos Power Fet 2.0 Amperes 400 Volts Rds(on) = 3.5 Ohm

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

MTD2N40E Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET DPAK for Surface Mount Designer's MTD2N40E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche and switch efficiently. This new high energy device also offers a drain to soure diode with fast...

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