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MTD2N40E - TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM

Key Features

  • are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. VDS = 0 V VGS = 0 V TJ = 25°C 1000 TJ = 25°C VGS = 0 V Ciss C,.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MTD2N50E TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM
MTD20N03HDL TMOS POWER FET
MTD20N06HD TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM
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MTD20N06V TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET DPAK for Surface Mount Designer's MTD2N40E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche and switch efficiently. This new high energy device also offers a drain–to–soure diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.