MTD6N15 datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MTD6N15 |
|---|---|
| Datasheet | MTD6N15_Motorola.pdf |
| File Size | 180.43 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | Power MOSFET |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA .. Order this document by MTD6N15/D Designer's Power Field Effect Transistor DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. Designer’s Data for “Worst Case” Conditions The Designer’s Data Sheet permits the...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MTD6N15 | Power Field Effect Transistor | ON Semiconductor |
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTD6N10 | TMOS POWER FET 6 AMPERES RDS(on) = 0.25 OHM 80 and 100 VOLTS |
| MTD6N10E | TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM |
| MTD6N20E | Power MOSFET |
| MTD6P10E | TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM |
| MTD10N05E | TMOS4 POWER FET |
| MTD12N06EZL | High Energy Power FET DPAK |
| MTD1302 | TMOS POWER FET |
| MTD15N06V | TMOS POWER FET |
| MTD15N06VL | TMOS POWER FET |
| MTD1N40 | POWER FIELD EFFECT TRANSISTOR |
