Datasheet4U Logo Datasheet4U.com

MTD9N10E Datasheet Tmos Power Fet

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

Overview: www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD9N10E/D Designer's TMOS E-FET .

Key Features

  • nce in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 1200 1000 C,.

MTD9N10E Distributor & Price

Compare MTD9N10E distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
ON Semiconductor Logo MTD9N10E Power MOSFET ON Semiconductor

More Datasheets from Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MTD10N05E TMOS4 POWER FET
MTD12N06EZL High Energy Power FET DPAK
MTD1302 TMOS POWER FET
MTD15N06V TMOS POWER FET
MTD15N06VL TMOS POWER FET
MTD1N40 POWER FIELD EFFECT TRANSISTOR
MTD1N50E TMOS POWER FET
MTD1N60E TMOS POWER FET
MTD1N80E TMOS POWER FET
MTD1P50E TMOS POWER FET