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MTP12P10 - TMOS POWER FET

Key Features

  • 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15.
  • 2.04 Q 1 2 3 A U K STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN H Z L V G D N R J CASE 221A.
  • 06 ISSUE Y Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability ari.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP12P10/D Power Field Effect Transistor This TMOS Power FET is designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100°C • Designer’s Data — IDSS, VDS(on), VGS(th) and SOA Specified at Elevated Temperature • Rugged — SOA is Power Dissipation Limited • Source–to–Drain Diode Characterized for Use With Inductive Loads ™ Data Sheet MTP12P10 TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.