MTP1N100E datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MTP1N100E |
|---|---|
| Datasheet | MTP1N100E_Motorola.pdf |
| File Size | 203.66 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N100E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP1N100E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced TMOS E FET is designed to...
View MTP1N100E datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MTP1N100E | Power Field Effect Transistor | ON Semiconductor |
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTP1N100 | Power MOSFET |
| MTP1N50E | TMOS POWER FET |
| MTP1N60E | TMOS POWER FET |
| MTP1N80E | TMOS POWER FET |
| MTP1N95 | Power MOSFET |
| MTP10N05 | (MTP10N05 / MTP10N06) N-Channel Power MOSFETs |
| MTP10N06 | (MTP10N05 / MTP10N06) N-Channel Power MOSFETs |
| MTP10N10E | TMOS POWER FETs |
| MTP10N10EL | TMOS POWER FET |
| MTP10N15 | POWER FIELD EFFECT TRANSISTOR |
