Datasheet4U Logo Datasheet4U.com

MTP1N80E - TMOS POWER FET

Key Features

  • load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 700 600 C,.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTP1N100E Power Field Effect Transistor ON Semiconductor
MTP10-B7F55 Thermopile Sensor MemsFrontier
MTP1013C3 -20V P-CHANNEL MOSFET CYStech Electronics
MTP10N08 (MTP10N08 / MTP10N10) N-Channel Power MOSFETs Fairchild Semiconductor
MTP10N08 (MTP10N08 / MTP10N10) Power Field Effect Transistor Motorola Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MTP1N100 Power MOSFET
MTP1N100E TMOS POWER FET
MTP1N50E TMOS POWER FET
MTP1N60E TMOS POWER FET
MTP1N95 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N80E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP1N80E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time.