MTP20N06V
Features of TMOS V
- On- resistance Area Product about One- half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
- Faster Switching than E- FET Predecessors Features mon to TMOS V and TMOS E- FETS
- Avalanche Energy Specified
- IDSS and VDS(on) Specified at Elevated Temperature
- Static Parameters are the Same for both TMOS V and TMOS E- FET
G S CASE 221A- 06, Style 5 TO- 220AB
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain- to- Source Voltage Drain- to- Gate Voltage (RGS = 1.0 MΩ) Gate- to- Source Voltage
- Continuous Gate- to- Source Voltage
- Non- Repetitive (tp ≤ 10 ms) Drain Current
- Continuous Drain Current
- Continuous @ 100°C Drain Current
- Single Pulse (tp ≤ 10 µs) Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS RθJC RθJA TL Value 60 60 ± 20 ± 25 20 13 70 60 0.40
- 55 to 175 200 2.5 62.5 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C m J °C/W °C ww w.D a ta S hee t4U .co
REV 1
Total Power Dissipation Derate above 25°C Operating and...
