Overview: .. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP20N06V/D ™ TMOS V ™
Designer's Data Sheet MTP20N06V
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and mutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
