MTP20N06V Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP20N06V/D ™ TMOS V ™ Designer's Data Sheet MTP20N06V TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS V is a new technology designed to achieve an on resistance area product about one half that of standard MOSFETs. This new technology more than doubles the present cell...
MTP20N06V Key Features
- On-resistance Area Product about One-half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
- Faster Switching than E-FET Predecessors Features mon to TMOS V and TMOS E-FETS
- Avalanche Energy Specified
- IDSS and VDS(on) Specified at Elevated Temperature
- Static Parameters are the Same for both TMOS V and TMOS E-FET
- Continuous Gate-to-Source Voltage
- Non-Repetitive (tp ≤ 10 ms) Drain Current
- Continuous Drain Current
- Continuous @ 100°C Drain Current
- 55 to 175 200 2.5 62.5 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C mJ °C/W °C
MTP20N06V Applications
- On-resistance Area Product about One-half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
- Faster Switching than E-FET Predecessors Features mon to TMOS V and TMOS E-FETS