MTP27N10E datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MTP27N10E |
|---|---|
| Datasheet | MTP27N10E_Motorola.pdf |
| File Size | 230.69 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM |
|
|
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP27N10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP27N10E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and mutation modes. This new energy efficient design also offers a drain to source diode with a fast recovery time....
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTP20N06V | TMOS POWER FET |
| MTP20N20E | TMOS POWER FET |
| MTP23N05L | Power Field Effect Transistor |
| MTP23P06 | Power Field Effect Transistor |
| MTP23P06V | TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM |
| MTP2955 | POWER FET |
| MTP2955E | TMOS POWER FET |
| MTP2955V | TMOS POWER FET |
| MTP29N15E | TMOS POWER FET |
| MTP2N20 | POWER FIELD EFFECT TRANSISTOR |
