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MTP2N40E - TMOS POWER FET

Key Features

  • Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. VDS = 0 V VGS = 0 V TJ = 25°C 1000 VGS = 0 V TJ = 25°C 400 C,.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MTP2N20 POWER FIELD EFFECT TRANSISTOR
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MTP2N60 Power Field Effect Transistor
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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP2N40E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time.