MTP30N06VL Overview
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP30N06VL/D TMOS V Power Field Effect Transistor TMOS V is a new technology designed to achieve an on resistance area product about one half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E FET designs, TMOS V is designed to withstand high energy...
MTP30N06VL Key Features
- On-resistance Area Product about One-half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
- Faster Switching than E-FET Predecessors Features mon to TMOS V and TMOS E-FETS
- Avalanche Energy Specified
- IDSS and VDS(on) Specified at Elevated Temperature
- Static Parameters are the Same for both TMOS V and TMOS E-FET MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
- Continuous Gate-to-Source Voltage
- Non-repetitive (tp ≤ 10 ms) Drain Current
- Continuous Drain Current
- Continuous @ 100°C Drain Current
- Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range
MTP30N06VL Applications
- On-resistance Area Product about One-half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
- Faster Switching than E-FET Predecessors Features mon to TMOS V and TMOS E-FETS
