MTP33N10E datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MTP33N10E |
|---|---|
| Datasheet | MTP33N10E_Motorola.pdf |
| File Size | 195.47 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET |
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SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by MTP33N10E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching...
View MTP33N10E datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MTP33N10E | Power MOSFET | ON Semiconductor |
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTP3055 | TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM |
| MTP30N06VL | TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM |
| MTP30N08M | POWER FIELD EFFECT TRANSISTOR |
| MTP30P06V | TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
| MTP36N06V | TMOS POWER FET |
| MTP3N100 | Power MOSFET |
| MTP3N100E | TMOS POWER FET 3.0 AMPERES 1000 VOLTS |
| MTP3N120E | TMOS POWER FET 3.0 AMPERES 1000 VOLTS |
| MTP3N25E | TMOS POWER FET 3.0 AMPERES 250 VOLTS |
| MTP3N50 | Power Field Effect Transistor |
