MTP33N10E Description
SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by MTP33N10E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching...