MTP4N80E Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's TMOS E-FET .™ Power Field Effect Transistor N- Channel Enhancement- Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage- blocking capability without degrading performance over time. In addition, this advanced TMOS E- FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain- to- source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and...