MTP4N80E datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MTP4N80E |
|---|---|
| Datasheet | MTP4N80E_Motorola.pdf |
| File Size | 154.49 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET 4.0 AMPERES 800 VOLTS |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's TMOS E-FET .™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient...
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTP4N85 | Power MOSFET |
| MTP4N40E | TMOS POWER FET |
| MTP4N50E | TMOS POWER FET |
| MTP4N90 | Power MOSFET |
| MTP40N10E | TMOS POWER FET |
| MTP45N05E | Power MOSFET |
| MTP10N05 | (MTP10N05 / MTP10N06) N-Channel Power MOSFETs |
| MTP10N06 | (MTP10N05 / MTP10N06) N-Channel Power MOSFETs |
| MTP10N10E | TMOS POWER FETs |
| MTP10N10EL | TMOS POWER FET |
