MTP52N06V
Key Features
- On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
- Faster Switching than E–FET Predecessors
- Avalanche Energy Specified
- IDSS and VDS(on) Specified at Elevated Temperature
- Static Parameters are the Same for both TMOS V and TMOS E–FET
