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MTP75N06HD - TMOS POWER FET

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Features

  • owever, snubbing reduces switching losses. 7000 6000 VDS = 0 V Ciss VGS = 0 V TJ = 25°C C,.

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Datasheet preview – MTP75N06HD

Datasheet Details

Part number MTP75N06HD
Manufacturer Motorola
File Size 220.66 KB
Description TMOS POWER FET
Datasheet download datasheet MTP75N06HD Datasheet
Additional preview pages of the MTP75N06HD datasheet.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP75N06HD/D Designer's HDTMOS E-FET ™ High Density Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low–voltage, high–speed switching applications in power supplies, converters and PWM motor controls, and inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs www.DataSheet4U.com where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.
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