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MTP7N20E - TMOS POWER FET

Datasheet Summary

Features

  • TANCE (pF) 600 Crss 450 300 150 VDS = 0 V 0 10 5 Ciss VGS = 0 V TJ = 25°C Ciss Coss Crss 5 0 10 15 20 25 VGS VDS GATE.
  • TO.
  • SOURCE OR DRAIN.
  • TO.
  • SOURCE.

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Datasheet preview – MTP7N20E

Datasheet Details

Part number MTP7N20E
Manufacturer Motorola
File Size 186.10 KB
Description TMOS POWER FET
Datasheet download datasheet MTP7N20E Datasheet
Additional preview pages of the MTP7N20E datasheet.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP7N20E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are www.DataSheet4U.com critical and offer additional safety margin against unexpected voltage transients.
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