| Part number | MTV32N20E |
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| Datasheet | MTV32N20E_Motorola.pdf |
| File Size | 264.86 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV32N20E/D Advance Information TMOS E-FET.™ Power Field Effect Transistor D3PAK for Surface Mount This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and mutation...
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTV10N100E | TMOS POWER FET 10 AMPERES 1000 VOLTS |
| MTV16N50E | TMOS POWER FET 16 AMPERES 500 VOLTS |
| MTV20N50E | TMOS POWER FET |
| MTV25N50E | TMOS POWER FET |
