MTW33N10E datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MTW33N10E |
|---|---|
| Datasheet | MTW33N10E_Motorola.pdf |
| File Size | 180.23 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW33N10E/D Designer's ™ Data Sheet TMOS EĆFET . ™ MTW33N10E Motorola Preferred Device Power Field Effect Transistor TOĆ247 with Isolated Mounting Hole N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain-to-source diode...
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTW32N20E | TMOS POWER FET |
| MTW32N25E | TMOS POWER FET |
| MTW35N15E | TMOS POWER FET |
| MTW10N100E | TMOS POWER FET |
| MTW10N40E | TMOS E-FET POWER FIELD EFFECT TRANSISTOR |
| MTW14N50E | TMOS POWER FET |
| MTW16N40E | TMOS POWER FET |
| MTW20N50E | Power MOSFET |
| MTW23N25E | TMOS POWER FET 23 AMPERES 250 VOLTS |
| MTW24N40E | TMOS POWER FET 24 AMPERES 400 VOLTS |
