MTY100N10E datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MTY100N10E |
|---|---|
| Datasheet | MTY100N10E_Motorola.pdf |
| File Size | 216.62 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY100N10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY100N10E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and mutation modes. This new energy efficient design also offers a drain to source diode with fast recovery time....
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTY10N100E | TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM |
| MTY14N100E | TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM |
| MTY16N80E | TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM |
| MTY25N60E | TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM |
| MTY30N50E | TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM |
| MTY55N20E | TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM |
