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MTY10N100E - TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM

Features

  • into an inductive load; however, snubbing reduces switching losses. 8000 VDS = 0 V 7000 C,.

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📁 Similar Datasheet

Part Number Description Manufacturer
MTY14N100E Power Field Effect Transistor ON Semiconductor
MTY16N80E Power Field Effect Transistor ON Semiconductor
MTY20N50E Power MOSFET ON Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MTY100N10E TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM
MTY14N100E TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM
MTY16N80E TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM
MTY25N60E TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM
MTY30N50E TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY10N100E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY10N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
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