MTY10N100E
Key Features
- Robust High Voltage Termination Avalanche Energy Specified Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
- Part: MTY10N100E
- Description: TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM
- Manufacturer: Motorola Semiconductor
- Size: 228.66 KB