MTY10N100E is TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM manufactured by Motorola Semiconductor.
| Part Number | Description |
|---|---|
| MTY100N10E | TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM |
| MTY14N100E | TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM |
| MTY16N80E | TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM |
| MTY25N60E | TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM |
| MTY30N50E | TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM |
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY10N100E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY10N100E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced TMOS E FET is designed...
