MTY30N50E is TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM manufactured by Motorola Semiconductor.
| Part Number | Description |
|---|---|
| MTY100N10E | TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM |
| MTY10N100E | TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM |
| MTY14N100E | TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM |
| MTY16N80E | TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM |
| MTY25N60E | TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM |
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY30N50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY30N50E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and mutation modes. This new energy efficient design also offers a drain to source diode with fast recovery time....
