• Part: MW4IC915GMBR1
  • Description: RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
  • Manufacturer: Motorola Semiconductor
  • Size: 702.82 KB
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Motorola Semiconductor
MW4IC915GMBR1
MW4IC915GMBR1 is RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS manufactured by Motorola Semiconductor.
.. MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MW4IC915/D RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On Chip design makes it usable from 750 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N-CDMA and W-CDMA. - Typical GSM/GSM EDGE Performances: 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA, 869-894 MHz and 921-960 MHz...