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MW4IC915GMBR1 - RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS

General Description

22 mF, 35 V Tantalum Chip Capacitors, AVX #TAJE226M035R 1000 pF Chip Capacitors, B Case, ATC #100B102JCA500X 22 pF Chip Capacitors, B Case, ATC #100B220JCA500X 10 pF Chip Capacitors, B Case, ATC #100B100JCA500X 10 mF Tantalum Chip Capacitor, Kemet #T491X226K035AS4394 10 kΩ, 1/4 W Chip Resistor (1206

Key Features

  • ut = 6 W (PEP) IDQ1 = 90 mA, IDQ2 = 240 mA Two-Tone Measurement 100 kHz Tone Spacing 0 -7 -14 -21 -28 -35 -42 -49 -56 -63 -70 960 -20.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MW4IC915/D RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On Chip design makes it usable from 750 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N-CDMA and W-CDMA. • Typical GSM/GSM EDGE Performances: 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA, 869-894 MHz and 921-960 MHz Output Power — 3 Watts Avg.