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MW5IC2030GMBR1 - RF LDMOS Wideband Integrated Power Amplifiers

General Description

1.8 pF High Q Chip Capacitor (0603) 1.5 pF High Q Chip Capacitor (0603) 3.9 pF High Q Chip Capacitor (0603) 6.8 pF High Q Chip Capacitor (0805) 100 pF Class 1 NPO Chip Capacitors (0805) 4.7 pF Class 1 NPO Chip Capacitor (0805) 0.1 µF X7R Chip Capacitors (1206) 0.01 µF Class 2 X7R Chip Capacitors (08

Key Features

  • Go to: www. freescale. com Freescale Semiconductor, Inc.

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MW5IC2030MBR1 RF LDMOS Wideband Integrated Power Amplifiers

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. www.DataSheet4U.com Order this document by MW5IC2030M/D The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip design makes it usable from 1930 to 1990 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, PHS, CDMA and W - CDMA. Final Application Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 160 mA, IDQ2 = 230 mA, Pout = 5 Watts Avg.