Motorola P2N5550
AMPLIFIER TRANSISTORS
| Part No. | P2N5550 |
|---|---|
| Datasheet | P2N5550 Download |
| Manufacturer |  Motorola |
| Description | AMPLIFIER TRANSISTORS |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Symbol 2N 2N 5550 5551 Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation T/\ = 25°C Derate above 25°C Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS VCEO VCBO VEBO ic PD pd Tj, st g 140 160 160 180 6.0 600 625 5.0 1.5 12 -55 to +150 Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Rfjjc 83.3 °C/W Thermal Resistance, Junction to Ambient RfjJA 200 °c/w (1) RftJA is mesured with the device soldered into a typical printed circuit board.ELECTRICAL CHARACTERISTICS
<TA = 25 °C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage (2) (IC = 10 mAdc, Ib = 0) P2N5