Motorola PBF259S
High Voltage Transistors
| Part No. | PBF259S |
|---|---|
| Datasheet | PBF259S Download |
| Manufacturer |  Motorola |
| Description | High Voltage Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg PBF259,S 300 300 5.0 500 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/°C Watts mW/°C °C 1 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/WELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 250 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 10 Vdc) 1.
