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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High Voltage Transistor Surface Mount
NPN Silicon
COLLECTOR 2,4
BASE 1
EMITTER 3
PZTA42T1
Motorola Preferred Device
SOT–223 PACKAGE NPN SILICON
HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
MAXIMUM RATINGS Rating
Symbol
Value
Unit
4
Collector-Emitter Voltage (Open Base) Collector-Base Voltage (Open Emitter) Emitter-Base Voltage (Open Collector) Collector Current (DC) Total Power Dissipation @ TA = 25°C(1) Storage Temperature Range Junction Temperature DEVICE MARKING
VCEO VCBO VEBO
IC PD Tstg TJ
300 300 6.0 500 1.5 – 65 to +150 150
Vdc Vdc Vdc mAdc Watts °C °C
1 2 3
CASE 318E-04, STYLE 1 TO-261AA
P1D
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction-to-Ambient(1)
RθJA
83.
PZTA42T1 Datasheet
