T3055EL - MMFT3055EL

Motorola Semiconductor (now NXP Semiconductors)

Key Features

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VR + 4.0 IFM + 20 V.
IS VDS Li DUT 6.0 2.0 VGS 0 0 20 40 60 80 VDS, DRAIN.
TO.
SOURCE.

T3055EL mmft3055el by Motorola Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	T3055EL
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	193.44 KB
Description	MMFT3055EL
Datasheet	T3055EL Datasheet

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT3055EL/D Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt SOT–223 for Surface Mount This advanced E–FET is a TMOS power MOSFET designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new energy efficient device also offers a drain–to–source diode with a fast recovery time.