Datasheet Summary
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Medium Power Field Effect Transistor
N- Channel Enhancement Mode Silicon Gate TMOS E- FETt SOT- 223 for Surface Mount
This advanced E- FET is a TMOS power MOSFET designed to withstand high energy in the avalanche and mutation modes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new energy efficient device also offers a drain- to- source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits...