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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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.™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate
This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive www.DataSheet4U.com loads are switched and offer additional safety margin against unexpected voltage transients.
TE53N50E Datasheet
