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TE53N50E - MTE53N50E

Key Features

  • h board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 60000 VDS = 0 V 50000 C,.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTE53N50E/D .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive www.DataSheet4U.com loads are switched and offer additional safety margin against unexpected voltage transients.