Motorola TP3024B
The TP3024B is a balanced transistor designed specifically for use in cellular radio systems. This device permits the design of a Class AB push–pull, high gain, broadband amplifier having a high degree of linearity without the need for complicated biasing circuitry. Each transistor chip measured separately.TP3024B Specifications
- Terminals : 4
- Max Operating Temp : 200°C
Source:
Octopart
MAXIMUM RATINGS
Rating Emitter–Base Voltage Operating Junction Temperature Storage Temperature Range Symbol VEBO TJ Tstg Value 4.0 200 – 65 to + 200 Unit Vdc °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) (TC = 75°C) Symbol RθJC Max 3.0 Unit °C/W CASE 395B–01, STYLE 1ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA, RBE = 75 Ohms) Collector–Emitter Leakage (VCE = 26 V, RBE = 75 Ohms) Emitter–Base Breakdown Voltage (IC = 5.0 mAdc, IC = 0) Emitter–Base Leakage (VBE = 2.5 V) V(BR)CER ICER V(BR)EBO IEBO 40 — 3.5 — — — — — — 5.0 — 1.0 Vdc mA Vdc mA ON CHARACTERISTICS (2) DC Current Gain (IC = 500 mA, VCE = 10 V) hFE 15 — 100 — DYNAMIC CHARACTERISTICS (1) Output Capacitance (VCB = 24 V, IE = 0, f = 1.0 MHz) Cob — 17 25 pF FUNCTIONAL TESTS (3) Common–Emitter Amplifier Power Gain (VCE = 26 V, Pout = 35.5 W, f = 960 MHz, IQtotal = 150 mA) Collector Efficiency (VCE = 26 V, Pout = 35.5 W, f = 960 MHz, IQtotal = 150 mA) GPE ηc 7.5 45 — — — — dB % NOTE: 1.