MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector–Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VCER VCBO VEBO IC PD Tstg TJ Value 40 48 3.5 4 52.5 0.3 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C CASE 319–07, STYLE 2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Symbol RθJC Max 3.3 Unit °C/W ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 30 mA, RBE = 75 Ω) Emitter–Base Breakdown Voltage (IE = 5 mAdc) Collector–Base Breakdown Voltage (IC = 30 mAdc) Collector–Emitter Leakage (VCE = 26 V, RBE = 75 Ω) V(BR)CER V(BR)EBO V(BR)CBO ICER 40 3.5 48 — — — — — — — — 8 Vdc Vdc Vdc mA ON CHARACTERISTICS DC Current Gain (IC =1 Adc, VCE = 10 Vdc) hFE 15 — 80 — (continued) NOTE: 1. Thermal resistance is determined under specified RF operating condition.