Motorola TY30N50E
Power Field Effect Transistor
| Part No. | TY30N50E |
|---|---|
| Datasheet | TY30N50E Download |
| Manufacturer |  Motorola |
| Description | Power Field Effect Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1 MΩ) Gate–Source Voltage — Continuous Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms) Drain Current — Continuous @ TC = 25°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 30 Apk, L = 10 mH, RG = 25 Ω ) Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Value 500 500 ± 20 ± 40 30 80 300 2.38 – 55 to 150 3000 0.42 40 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C mJ °C/W °C Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
